STMicroelectronic STM8S105K4 MCU Protective Memory Breaking will remove the fuse bit of microcontroller by cracking technique and readout embedded firmware from microprocessor flash memory;

Interrupt controller

• Nested interrupts with three software priority levels
  • 32 interrupt vectors with hardware priority
  • Up to 27 external interrupts on six vectors including TLI
  • Trap and reset interrupts

Flash program memory and data EEPROM

• 8 Kbyte of Flash program single voltage Flash memory
  • 128 byte true data EEPROM
  • User option byte area

Write protection (WP)

Write protection of Flash program memory and data EEPROM is provided to avoid unintentional overwriting of memory that could result from a user software malfunction after cloning mcu stm8s103f2 source code.

STMicroelectronic STM8S105K4 MCU La rotura de la memoria protectora eliminará el bit de fusible del microcontrolador mediante la técnica de craqueo y la lectura del firmware integrado de la memoria flash del microprocesador;

There are two levels of write protection. The first level is known as MASS (memory access security system). MASS is always enabled and protects the main Flash program memory, data EEPROM and option bytes.

To perform in-application programming (IAP), this write protection can be removed by writing a MASS key sequence in a control register. This allows the application to modify the content of main program memory and data EEPROM when copying microprocessor stm8s003f3 flash memory content, or to reprogram the device option bytes. A second level of write protection, can be enabled to further protect a specific area of memory known as UBC (user boot code).

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