Extract PLD MCU Code from program memory and data eeprom, cut off the fuse bit embedded inside PLD chip by MCU cracking technique and readout code from PLD.

Extract PLD MCU Code from program memory and data eeprom, cut off the fuse bit embedded inside PLD chip by MCU cracking technique and readout code from PLD

The changes in the cell threshold voltage caused by write/erase cycles are particularly apparent in virgin and freshly-programmed cells. It is possible to differentiate between programmed-and-erased and never-programmed cells, especially if the cells have only been programmed and erased once, since virgin cell characteristics will differ from the erased cell characteristics. The changes become less noticeable after ten program/erase cycles.

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